Design of mm-wave InP DHBT power amplifiers

Author

Johansen, Tom K. ; Yan, Lei

Author_Institution

DTU Elektro, Tech. Univ. of Denmark, Lyngby, Denmark

fYear

2011

fDate

Oct. 29 2011-Nov. 1 2011

Firstpage

357

Lastpage

360

Abstract

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power at 69.6GHz.

Keywords

heterojunction bipolar transistors; indium compounds; microwave integrated circuits; millimetre wave power amplifiers; common-base; common-emitter; frequency 69.6 GHz; mm-wave DHBT power amplifiers design; mm-wave integrated power amplifiers; mm-wave power cells; DH-HEMTs; Gain; Indium phosphide; Power amplifiers; Power generation; Power measurement; Topology; Heterojunction bipolar transistor (HBT); millimeter-wave circuit; monolithic microwave integrated circuit (MMIC); power amplifier (PA);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Optoelectronics Conference (IMOC), 2011 SBMO/IEEE MTT-S International

Conference_Location

Natal

ISSN

Pending

Print_ISBN

978-1-4577-1662-1

Type

conf

DOI

10.1109/IMOC.2011.6169249

Filename

6169249