• DocumentCode
    3541255
  • Title

    Si bicrystal single-electron FETs

  • Author

    Kasai, Y. ; Ishino, T. ; Moraru, D. ; Nuryadi, R. ; Ikeda, H. ; Tabe, M.

  • Author_Institution
    Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Si single-electron (or single-hole) tunneling PETs containing a network of screw dislocations, which is intentionally formed as a periodic potential source, has been studied focusing on effects of thickness difference of the facing Si layers, i.e., upper and lower top Si layers. As a result, we have found that moderately balanced thicknesses between the layers provide significantly prominent single-electron characteristics.
  • Keywords
    field effect transistors; screw dislocations; silicon; tunnelling; Si bicrystal single-electron FET; Si single-electron tunneling PET; periodic potential source; screw dislocations; Crystallization; FETs; Fasteners; Intelligent networks; Positron emission tomography; Stability; Stress; Threshold voltage; Tunneling; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418426
  • Filename
    5418426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541255