A novel low-power input-independent MOS AC/DC charge pump

Author

Yao, Yuan ; Shi, Yin ; Dai, Foster F.

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

fYear

2005

fDate

23-26 May 2005

Firstpage

380

Abstract

The paper presents a novel fully integrated MOS AC to DC charge pump with low power dissipation and stable output for RFID applications. To improve the input sensitivity, we replaced the Schottky-diodes in conventional charge pumps with MOS diodes with zero threshold, which have fewer process defects and are thus more compatible with other circuits. The charge pump in a RFID transponder is implemented in a 0.35 μm CMOS technology with 0.24 mm² size. The analytical model of the charge pump and the simulation results are presented.

Keywords

CMOS analogue integrated circuits; integrated circuit design; integrated circuit modelling; low-power electronics; power consumption; radiofrequency identification; semiconductor device models; semiconductor diodes; sensitivity; voltage multipliers; 0.35 micron; CMOS technology; MOS diodes; RFID transponder; Schottky-diodes; analytical model; fully integrated MOS AC-DC charge pump; input sensitivity; power dissipation; voltage multipliers; Analytical models; CMOS technology; Charge pumps; Circuits; FETs; Power dissipation; Radio frequency; Radiofrequency identification; Schottky diodes; Voltage; AC/DC; charge pump; low-power CMOS; radio-frequency identification (RFID);

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1464604

Filename

1464604