Electron mean-free-path experimental extraction on ultra-thin and ultra-short strained and unstrained FDSOI n-MOSFETs

For the first time, using a new quasi-ballistic extraction methodology dedicated to low longitudinal field conditions, experimental carrier mean-tree-paths have been determined on strained and unstrained n-FDSOI devices with Si film thickness down to 2.5 nm, gate length down to 30 nm and a TiN/HfO₂ gate stack. Through deep .inversion charge and temperature investigations, dominant carrier transport mechanisms are analyzed. It is experimentally revealed that transport degradation occurs in short and thin channels, which is shown to be mainly due to additional Coulomb scattering rather than ballistic effects in both strained and unstrained devices.