• DocumentCode
    3541525
  • Title

    Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

  • Author

    Hong, B.H. ; Jung, Y.C. ; Hwang, S.W. ; Cho, K.H. ; Yeo, K.H. ; Yeoh, Y.Y. ; Suk, S.D. ; Li, M. ; Kim, D.-W. ; Park, D. ; Oh, K.S. ; Lee, W.S.

  • Author_Institution
    Res. Center for Time domain Nano-functional Devices, Korea Univ., Seoul, South Korea
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.
  • Keywords
    MOSFET; nanowires; silicon; Si; Single electron tunneling behaviors; gate-all-around nanowire MOSFET; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; MOSFETs; Modems; Physics; Quantum dots; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418464
  • Filename
    5418464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541525