Ultra-low current resistive memory based on Cu-SiO2

Ultra-low current resistive switching in sputtered Cu/SiO₂/Pt and Cu/SiO₂/Ir structures was investigated. Both Cu and SiO₂ are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.