DocumentCode
3541617
Title
White noise characteristics of nanoscale MOSFETs in all operating regions
Author
Jongwook Jeon ; Park, Byung-Gook ; Lee, Long Duk ; Shin, Hyungcheol
Author_Institution
ISRC, Seoul Nat. Univ., Seoul, South Korea
fYear
2008
fDate
15-16 June 2008
Firstpage
1
Lastpage
2
Abstract
In this paper, the white noise characteristics of nanoscale MOSFETs are presented in all operation regions. The measured drain current noise data are compared with power spectral density of shot-like and thermal noise models. The experimental results show that drain current noise is shot-like in weak inversion region and thermal noise in strong inversion region even at 36 nm gate length.
Keywords
MOSFET; nanotechnology; thermal noise; white noise; drain current noise; nanoscale MOSFET; power spectral density; shot-like model; thermal noise; white noise; 1f noise; Circuit noise; Current measurement; Equations; Low-frequency noise; MOSFETs; Noise level; Noise measurement; Semiconductor device noise; White noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-2071-1
Type
conf
DOI
10.1109/SNW.2008.5418476
Filename
5418476
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