An accurate statistical analysis of random dopant induced variability in 140,000 13nm MOSFETs

Author

Reid, Dave ; Millar, C. ; Roy, Sandip ; Roy, Goutam ; Sinnott, Richard ; Stewart, George ; Stewart, George ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

Summary form only given. In this paper, we present groundbreaking results of the simulation of 140,000 well scaled 13nm nChannel bulk MOSFETs, each microscopically different in terms of discrete dopant distributions. These devices were simulated using the well established Glasgow 3D drift/diffusion atomistic simulator. In order to undertake simulations of such a magnitude, we have employed advanced grid technology being developed at Glasgow as part of the nanoCMOS project.

Keywords

MOSFET; semiconductor doping; statistical analysis; Glasgow 3D drift/diffusion atomistic simulator; discrete dopant distributions; grid technology; nChannel bulk MOSFET; random dopant induced variability; simulation; statistical analysis; Analytical models; CMOS technology; Gaussian distribution; MOSFETs; Probability distribution; Semiconductor device modeling; Slabs; Statistical analysis; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418478

Filename

5418478