• DocumentCode
    3541666
  • Title

    Multigate SOI MOSFETs: Accumulation-mode vs. enhancement-mode

  • Author

    Afzalian, A. ; Lederer, D. ; Lee, C.-W. ; Yan, R. ; Xiong, W. ; Cleavelin, C. Rinn ; Colinge, J.-P.

  • Author_Institution
    Tyndall Nat. Inst., Cork, Ireland
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The performances of accumulation-mode and inversion-mode multigate FETs are compared. Both simulation and experimental data are presented. Accumulation-mode devices have a higher current drive and less process variability than inversion-mode FETs.
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; accumulation mode; enhancement mode; inversion mode; multigate SOI MOSFET; Computational modeling; Doping; Electrons; FETs; Green function; Instruments; MOS devices; MOSFETs; Potential well; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418482
  • Filename
    5418482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541666