• DocumentCode
    3541671
  • Title

    Extraction of RF parameters in planar channel MOSFETs through RF device modeling

  • Author

    Lee, Ju-Wan ; Cho, Sung-Man ; Jo, Gwang-Doo ; Kim, Young-Kwang ; Son, Hun, II ; Lee, Jong-Ho

  • Author_Institution
    Sch. of EECS, Kyungpook Nat. Univ., Daegu, South Korea
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A new method to extract RF parameters of planar channel MOSFETs through RF device modeling was proposed, and also the model was verified up to 20 GHz. It was thought the proposed method and models can be applied consistently to extract resistances.
  • Keywords
    MOSFET; millimetre wave field effect transistors; semiconductor device models; RF device modeling; RF parameter extraction; frequency 20 GHz; planar channel MOSFETs; Circuit simulation; Circuit synthesis; Immune system; Large scale integration; MOSFETs; Nanoscale devices; Parameter extraction; Radio frequency; Radiofrequency integrated circuits; Roentgenium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418483
  • Filename
    5418483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541671