Theoretical investigation and analytical modelling of Metal Insulator Metal gate controlled tunnelling Transistor

This paper explore the potential of a Metal Insulator Metal gate controlled tunneling Transistor (MIMT) as a high performance device immune to band-to-band tunneling, GIDL, and stochastic channel doping fluctuations. A semi-analytical model was developed and used to guide device optimization. It is shown that the best performance is obtained by increasing the ratio between the permittivity of the gate oxide and the tunneling oxide as well as by integrating an ultra thin-body channel. The optimum channel length is around 8 nm. In a well tempered, optimized device, simulations show both an OFF current below 1 nA/¿m and an ON current above 1mA/ ¿m, by maintaining a steep subthreshold slope near 60mV/decade over a wide range of gate bias that is determined by the barrier height between the metal source and the dielectric channel.