A wide dynamic range CMOS active pixel sensor with frame difference

Author

Milirud, Vadim ; Fleshel, Leonid ; Zhang, Wenjing ; Jullien, Graham ; Yadid-Pecht, Orly

Author_Institution

Dept of Electr. & Comput. Eng., Calgary Univ., Alta., Canada

fYear

2005

fDate

23-26 May 2005

Firstpage

588

Abstract

A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported. The double in-pixel storage enables global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7 μm with a fill factor of 15%. A 64×64 APS array with on-chip dynamic random access memory (DRAM) has been fabricated in 0.18 μm 1P6M CMOS technology. The pixels operate with 1.8 V supply for low-power operation. The expected power consumption is around 50 mW.

Keywords

CMOS image sensors; DRAM chips; image motion analysis; integrated circuit design; low-power electronics; power consumption; 0.18 micron; 1.8 V; 7 micron; CMOS active pixel sensor; chip design; double in-pixel storage; fill factor; frame difference; global shutter operation; in-pixel frame difference; linear output; low-power operation; motion detection; on-chip DRAM; on-chip dynamic random access memory; pixel pitch; power consumption; processing logic architecture; wide dynamic range; CMOS image sensors; CMOS technology; Cameras; Circuits; Dynamic range; Layout; Lighting; Motion detection; Video compression; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1464656

Filename

1464656