Scaling the bulk-driven MOSFET

Author

Urban, Christopher ; Moon, James E. ; Mukund, P.R.

Author_Institution

Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY, USA

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

42

Lastpage

45

Abstract

This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of g_mb is observed across process technology and it is shown that the g_mb/g_m ratio falls from 0.38 to 0.12 between IBM´s 0.25 Â¿m and 65 nm bulk CMOS processes via simulation. Delta and step doping are then proposed to enable the scaling of bulk-driven MOSFETs down to a channel length of 80 nm on a one volt supply. Using 2-D device simulations in ATLAS, it is shown that the intrinsic gain of a bulk-driven MOSFET can be enhanced by as much as 78% for a step doping profile and 106% for a delta doping profile in an NMOS device when compared to a uniform substrate.

Keywords

MOSFET; doping profiles; 2D device simulations; CMOS process; bulk-driven MOSFET; delta doping profile; device scaling; size 0.25 mum; size 65 nm; size 80 nm; step doping profile; CMOS technology; Capacitance; Doping profiles; MOS devices; MOSFET circuits; Microelectronics; Moon; Operational amplifiers; Paper technology; Transconductance; Analog circuits; CMOS; bulk-driven MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418591

Filename

5418591