A new SPICE macro-model for simulation of single electron circuits

Author

Karimian, Masood ; Dousti, Massoud ; Pouyan, M. ; Faez, R.

Author_Institution

Dept. of Electron. Eng., Islamic Azad Univ., Tehran, Iran

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

228

Lastpage

231

Abstract

In this paper we have proposed a new and more accurate macro-model for simulation of single electron transistors (SETs). Furthermore, this model includes the ability of electron tunneling time calculation. In our proposed model, we have modified the previous models and applied some basic corrections to their formulas. In addition to achievement of more accuracy, we have added a switched capacitor circuit, as a quantizer, to evaluate the time of electron tunneling through the barrier. We used HSPICE for high-speed simulation and observed that our macro-model gives more accurate results than of the other models when compare with SIMON 2.0. This model is completely applicable for calculating the delay time of complicated circuits.

Keywords

semiconductor device models; single electron transistors; switched capacitor networks; tunnelling; SIMON 2.0; SPICE macromodel; electron tunneling time; quantizers; single electron transistors; switched capacitor circuit; Circuit analysis; Circuit simulation; Integrated circuit modeling; Intrusion detection; Quantum computing; Quantum dots; SPICE; Single electron transistors; Switched capacitor circuits; Tunneling; HSPICE; Macro-model; Quantizer; SIMON; Single electron transistor (SET); Switched capacitor circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418646

Filename

5418646