Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

Author

Shih-Chieh Wu ; Hsien-Tsung Feng ; Ming-Jiue Yu ; I-Ting Wang ; Tuo-Hung Hou

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

10-13 Dec. 2012

Abstract

We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.

Keywords

gallium compounds; indium compounds; random-access storage; zinc compounds; InGaZnO; complete logic-compatible amorphous thin-film transistors; flexible nonvolatile memory; high-density two-bit-per-cell operations; independent resistive switching; localized resistive switching; low-cost integration; low-temperature fabrication; multibit-per-cell TFT resistive-switching memory; system-on-plastic applications; temperature 293 K to 298 K; Hafnium compounds; Logic gates; Nickel; Nonvolatile memory; Resistance; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6478983

Filename

6478983