Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

We show that multilayered transition-metal dichalcogenides such as multilayer MoS₂ present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization of multilayer MoS₂ TFTs, supported by density-functional theory based bandstructure calculations, we show the inherently attractive properties of these materials for such applications. We find that the current modulation of such devices is high, the current saturation is robust, normally-off operation is feasible, effective field-effect mobility at RT exceeds 100 cm²/V.s, and the channel can be operated in both accumulation and inversion modes. These properties make multilayer MoS₂ more feasible than single layer versions to maintain processing robustness.