Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs

Author

Murti, M.R. ; Yoo, L. ; Raghavan, A. ; Nuttinck, S. ; Laskar, J. ; Bautista, J. ; Lai, R.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

1241

Abstract

In this paper, we present the small-signal and noise modeling of InP/ln/sub 0.8/Ga/sub 0.2/As HEMTs at cryogenic temperatures. The effect of various physical mechanisms influencing the small-signal parameters, especially the RF transconductance and RF output resistance and their temperature dependence are discussed in detail. Accurate on-wafer noise parameter measurements are carried out on InP HEMTs from 300 K to 18 K and the variation of the equivalent noise temperatures of drain and source (T/sub d/ and T/sub g/) are modeled against temperature. A cryogenic LNA in the Ka-band with a noise temperature of 10 K has been demonstrated.

Keywords

III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; semiconductor device noise; 300 to 18 K; HEMTs; InP-InAlAs-InGaAs; Ka-band; RF output resistance; RF transconductance; cryogenic LNA; cryogenic temperatures; equivalent noise temperatures; noise modeling; on-wafer noise parameter measurements; physical mechanisms; small-signal modeling; temperature-dependent noise parameters; Cryogenics; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise measurement; Radio frequency; Space technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863584

Filename

863584