Reliable, high-power continuous wave operation of 630-nm lasers and laser arrays

Author

Bo Lu ; Osinski, J.S. ; Zhao, H. ; Schmitt, B. ; Lang, R.J.

Author_Institution

SDL Inc., San Jose, CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

283

Lastpage

284

Abstract

Summary form only given. We report low threshold (4.5 A), high efficiency (1.0 W/A) and high output power (15 W) cw operation in the 630 nm band from an AlGaInP-GaInP monolithically integrated laser diode array. The epitaxial design consists of a standard GaInP strained quantum well active region and AlGaInP waveguide and cladding layers.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optoelectronics; laser reliability; laser transitions; optical pumping; quantum well lasers; semiconductor device reliability; semiconductor laser arrays; 15 W; 4.5 A; 620 nm; 630 nm; 630 nm band; AlGaInP waveguide layers; AlGaInP-GaInP; AlGaInP-GaInP monolithically integrated laser diode array; CW lasers; cladding layers; cw operation; epitaxial design; high efficiency; high output power; low threshold; reliable high-power continuous wave operation; semiconductor laser arrays; standard GaInP strained quantum well active region; Gallium nitride; Optical arrays; Optical filters; Optical pumping; Potential well; Quantum well lasers; Semiconductor laser arrays; Stimulated emission; Temperature; Water heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676172

Filename

676172