Electron time-of-flight measurements in quantum well lasers

Author

Wood, S.A. ; Somerford, D.J. ; Smowton, P.M. ; Button, C.C. ; Blood, P.

Author_Institution

Dept. of Phys. & Astron., Univ. of Wales, Cardiff, UK

fYear

1998

fDate

3-8 May 1998

Firstpage

286

Lastpage

287

Abstract

Summary form only given. We present results obtained by monitoring the minority carrier leakage through the p-cladding using specially designed lasers. We show the conduction band profile through such a laser, which will be referred to as a monitor pit laser. The characteristics of these lasers are identical to a control laser, which is itself typical of standard AlGaInP quantum well lasers.

Keywords

III-V semiconductors; aluminium compounds; claddings; electron mobility; gallium compounds; high-speed optical techniques; indium compounds; laser variables measurement; monitoring; quantum well lasers; semiconductor device testing; time of flight spectra; AlGaInP; conduction band profile; control laser; electron time-of-flight measurements; minority carrier leakage; monitor pit laser; monitoring; p-cladding; quantum well lasers; standard AlGaInP quantum well lasers; Artificial intelligence; Electrons; Laser mode locking; Laser tuning; Monitoring; Optical pulse shaping; Optical pulses; Quantum well lasers; Radiative recombination; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676175

Filename

676175