DocumentCode
3543743
Title
Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes
Author
Chang Sheng Xia ; Li, Z. M. Simon ; Yang Sheng
Author_Institution
Software Inc. China Branch, Shanghai, China
fYear
2013
fDate
19-22 Aug. 2013
Firstpage
39
Lastpage
40
Abstract
Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated by APSYS software. The simulation results show that thin LB has positive effect at low p-doping concentration while negative at high concentration and that p-doping is more effective for LEDs with thick LB to increase their efficiency.
Keywords
III-V semiconductors; doping profiles; gallium compounds; indium compounds; light emitting diodes; semiconductor doping; wide band gap semiconductors; APSYS software; InGaN-GaN; MQW LED; blue light-emitting diodes; last barrier effect; multiple quantum well light-emitting diodes; p-doping concentrations; Gallium nitride; Light emitting diodes; Mathematical model; Power generation; Quantum well devices; Radiative recombination; Software;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location
Vancouver, BC
ISSN
2158-3234
Print_ISBN
978-1-4673-6309-9
Type
conf
DOI
10.1109/NUSOD.2013.6633113
Filename
6633113
Link To Document