DocumentCode
3543776
Title
Temperature dependence of lasing wavelength in a 1.3-/spl mu/m GaInNAs laser diode with high T/sub 0/
Author
Kondow, M. ; Nakahara, Kouji ; Kitatani, Takeshi ; Larson, Michael C. ; Uomi, K.
Author_Institution
RWCP Optoelectr., Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
3-8 May 1998
Firstpage
295
Lastpage
296
Abstract
Summary form only given. The GaInNAs laser diode is very promising for use as a 1.3-/spl mu/m light source in access networks from the viewpoint of lasing wavelength stability against temperature shift and a high T/sub 0/.
Keywords
III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser transitions; optical transmitters; semiconductor lasers; 1.3 mum; GaInNAs; GaInNAs laser diode; IR light source; access networks; high T/sub 0/; lasing wavelength; lasing wavelength stability; optical transmitters; temperature dependence; temperature shift; Chemical lasers; Diode lasers; Electrons; Laboratories; Optical waveguides; Pulse measurements; Temperature dependence; Temperature distribution; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.676186
Filename
676186
Link To Document