DocumentCode
3543871
Title
Fully coupled thermoelectroelastic simulations of GaN devices
Author
Ancona, Mario G.
Author_Institution
Code 6876, Naval Res. Lab. Washington, Washington, DC, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
The continuum equations describing the fully coupled electrical, mechanical and thermal behaviors of GaN devices are presented and illustrated with a variety of examples from RF and power electronics.
Keywords
III-V semiconductors; electrostatics; gallium compounds; semiconductor devices; thermal analysis; thermoelasticity; wide band gap semiconductors; GaN; RF electronics; and power electronics; continuum equations; fully coupled electrical behaviors; fully coupled thermoelectroelastic simulations; mechanical behaviors; thermal behaviors; Aluminum gallium nitride; Electric fields; Equations; Gallium nitride; HEMTs; Mathematical model; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479037
Filename
6479037
Link To Document