• DocumentCode
    3543944
  • Title

    What is the problem with GaN-based VCSELs?

  • Author

    Piprek, Joachim

  • Author_Institution
    NUSOD Inst. LLC, Newark, DE, USA
  • fYear
    2013
  • fDate
    19-22 Aug. 2013
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    In contrast to the impressive progress of GaN-based edge-emitting lasers in recent years, III-nitride vertical-cavity surface-emitting lasers (VCSELs) still exhibit severe performance limitations. Using advanced device simulation, this presentation evaluates design and material issues with different GaN-VCSEL concepts and identifies performance limiting internal mechanisms.
  • Keywords
    III-V semiconductors; gallium compounds; laser cavity resonators; surface emitting lasers; wide band gap semiconductors; GaN; III-nitride vertical-cavity surface-emitting lasers; VCSEL; edge-emitting lasers; Cavity resonators; Gallium nitride; Laser modes; Optical polarization; Temperature measurement; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
  • Conference_Location
    Vancouver, BC
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-6309-9
  • Type

    conf

  • DOI
    10.1109/NUSOD.2013.6633138
  • Filename
    6633138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3543944