DocumentCode
3543995
Title
Terahertz plasmon resonances in GaN and graphene
Author
Lin Wang ; Anqi Yu ; Xiaoshuang Chen ; Weida Hu ; Wei Lu
Author_Institution
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
fYear
2013
fDate
19-22 Aug. 2013
Firstpage
101
Lastpage
102
Abstract
The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying of THz radiation in wide spectrum region, paving the way for self-coupling and detection of THz radiation in multiple quantum systems.
Keywords
III-V semiconductors; gallium compounds; graphene; microwave photonics; terahertz wave detectors; terahertz wave generation; terahertz wave spectra; wide band gap semiconductors; C; GaN; GaN-based device; THz radiation; graphene device; hydrodynamic rectifying; multiple quantum systems; resonant absorption; self-coupling; terahertz plasmon resonances; Gallium nitride; Graphene; HEMTs; MODFETs; Plasma waves; Plasmons; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location
Vancouver, BC
ISSN
2158-3234
Print_ISBN
978-1-4673-6309-9
Type
conf
DOI
10.1109/NUSOD.2013.6633144
Filename
6633144
Link To Document