DocumentCode
3544018
Title
III-Nitride LED efficiency droop models: A critical status review
Author
Piprek, Joachim
Author_Institution
NUSOD Inst. LLC, Newark, DE, USA
fYear
2013
fDate
19-22 Aug. 2013
Firstpage
107
Lastpage
108
Abstract
GaN- and AlN-based light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Based on different theoretical models, several physical mechanisms have been proposed to explain the efficiency droop; however, conclusive experimental evidence is still missing for these proposals, and none of them is generally accepted. This presentation reviews and evaluates the main efficiency droop models currently under consideration.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; reviews; semiconductor device models; wide band gap semiconductors; AlN; AlN-based light-emitting diodes; GaN; GaN-based light-emitting diodes; III-nitride LED efficiency droop models; injection current; review; Current measurement; Density measurement; Light emitting diodes; Predictive models; Proposals; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location
Vancouver, BC
ISSN
2158-3234
Print_ISBN
978-1-4673-6309-9
Type
conf
DOI
10.1109/NUSOD.2013.6633147
Filename
6633147
Link To Document