DocumentCode
3544165
Title
Finite difference k.p modeling of type II MQWs
Author
Lestrade, Michel ; Li, Z.Q. ; Li, Z. Simon
Author_Institution
Crosslight Software Inc., Vancouver, BC, Canada
fYear
2013
fDate
19-22 Aug. 2013
Firstpage
141
Lastpage
142
Abstract
In this talk, we will show some of the limitations of the finite difference technique when applied to k.p modeling of type II MQW structures. Improvements to the commercial APSYS software were made to overcome these limitations and provide sturdy rejection of spurious QW solutions. Dispersion relations and dipole moments for a sample GaAsSb/InGaAs structure will also be discussed.
Keywords
III-V semiconductors; dispersion relations; finite difference methods; gallium arsenide; indium compounds; k.p calculations; semiconductor quantum wells; APSYS software; GaAsSb-InGaAs; dipole moments; dispersion relations; finite difference k.p modeling; type II MQW structures; Dispersion; Eigenvalues and eigenfunctions; Photonic band gap; Quantum well devices; Software; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location
Vancouver, BC
ISSN
2158-3234
Print_ISBN
978-1-4673-6309-9
Type
conf
DOI
10.1109/NUSOD.2013.6633164
Filename
6633164
Link To Document