• DocumentCode
    3544637
  • Title

    Monte Carlo simulation in VDDmin modeling across Fab process

  • Author

    Guo, Hugo ; Yang, Yang ; Bowen, Jiang

  • Author_Institution
    Shanghai Product Eng. Team, LSI Corp., Shanghai, China
  • fYear
    2012
  • fDate
    10-11 July 2012
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    VDDmin is defined as the lowest supply voltage at which a device can produce correct logic states. It is typically obtained by performing a binary or linear supply voltage search. VDDmin or very-low voltage (VLV) testing is a non-IDDQ defect based test method that has been shown to be an effective method to screen manufacturing defects [1, 2, 3, 4]. It is taken as an indicator of device performance and reliability. Monte Carlo simulation is a random sampling based computational methodology, used extensively for engineering analysis [5, 6, 7]. This paper discuss a VDDmin determination methodology base on-Monte Carlo simulation, case study is presented to illustrate that this approach can precisely predict yield impact due to process shift.
  • Keywords
    Monte Carlo methods; low-power electronics; random processes; sampling methods; semiconductor device reliability; semiconductor device testing; Fab process; Monte Carlo simulation; VDDmin determination methodology; VDDmin modeling; VLV testing; binary suppy voltage; linear supply voltage; logic state; nonIDDQ defect; random sampling; very-low voltage testing; Computational modeling; Correlation; Foundries; Monte Carlo methods; Performance evaluation; Testing; Isat; Monte Carlo; VDDmin; Yield;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2012 4th Asia Symposium on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4673-2687-2
  • Type

    conf

  • DOI
    10.1109/ACQED.2012.6320499
  • Filename
    6320499