DocumentCode
3544919
Title
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
Author
Nogami, T. ; Penny, C. ; Madan, A. ; Parks, C. ; Li, Jie ; Flaitz, P. ; Uedono, Akira ; Chiang, S. ; He, Mengxun ; Simon, A. ; Bolom, T. ; Ryan, Tim ; Ito, Fumihiko ; Christiansen, C. ; Tai, Li-Heng ; Hu, C.-K. ; Kim, Heonhwan ; Zhang, Xiaobing ; Tanwar,
fYear
2012
fDate
10-13 Dec. 2012
Abstract
Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM enhancement. A carbonyl-based CVD-Co liner film consumed Mn, reducing its segregation and EM benefit, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.
Keywords
chemical vapour deposition; copper alloys; electromigration; manganese alloys; BEOL; Cu(Mn) alloy seed interconnects; EM enhancement; carbonyl-based CVD-Co liner film; electromigration extendibility; Annealing; Doping; Films; Grain boundaries; Manganese; Plasmas;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479161
Filename
6479161
Link To Document