Development of 4-GHz flip-chip VCO module

Author

Stadius, Kari ; Halonen, Kari

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

fYear

2005

fDate

23-26 May 2005

Firstpage

2687

Abstract

This paper deals with the design issues for 4-GHz VCO implemented using flip-chip technique. A high quality passive integrated device chip is combined with a low-cost CMOS die. Two VCO topologies are selected and eight circuit variants designed. Various MOS varactor structures are compared and a loss modeling method is presented. Integrated passive device technology is presented and inductor modeling is carried out using EM-simulations. Experimental results are given for some of the measured inductors and varactors, and for the eight types of VCO modules. As an example, one circuit candidate covers 3.6-4.2 GHz with phase noise of -125 dBc/Hz@1MHz offset, provides 0 dBm output power and the core oscillator draws 5 mA from a 2-V supply.

Keywords

CMOS integrated circuits; flip-chip devices; inductors; microwave oscillators; varactors; voltage-controlled oscillators; 2 V; 3.6 to 4.2 GHz; 5 mA; EM-simulations; MOS varactor structures; VCO topologies; flip-chip VCO module; inductor modeling; loss modeling; low-cost CMOS die; oscillator; passive integrated device chip; CMOS technology; Circuit topology; Inductors; Integrated circuit measurements; Integrated circuit technology; Phase noise; Power generation; Semiconductor device modeling; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465180

Filename

1465180