DocumentCode
354569
Title
Intensity dependence of the transparency current in InGaAsP semiconductor optical amplifiers
Author
Kennedy, G.T. ; Roberts, P.D. ; Sibbett, W. ; Davies, D.A.O. ; Fisher, M.A. ; Adams, M.J.
Author_Institution
J.F. Allen Phys. Res. Labs., Univ. of St. Andrews, Fife, UK
fYear
1996
fDate
2-7 June 1996
Firstpage
11
Lastpage
12
Abstract
Summary form only given. Recently there has been considerable interest in ultrafast gain and refractive index nonlinearities in InGaAsP semiconductor amplifiers at wavelengths around 1.5 /spl mu/m. In particular, when an amplifier is biased at transparency such that a pulse propagating through it experiences no net gain or absorption, a large non-linearity having a recovery time of a few picoseconds has been measured. In this paper measurements of the transparency using the pump-probe method were compared to the optoelectronic signal method. Some discrepancies were observed and these are discussed together with the implications of the intensity-dependent transparency current for all-optical switching.
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; self-induced transparency; semiconductor lasers; 1.5 micron; InGaAsP; all-optical switching; intensity dependence; optoelectronic signal; pump-probe measurement; refractive index nonlinearity; semiconductor optical amplifier; transparency current; ultrafast gain; Absorption; Gain measurement; Optical amplifiers; Optical propagation; Optical pulses; Pulse amplifiers; Pulse measurements; Refractive index; Semiconductor optical amplifiers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864298
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