Size dependence of selectively oxidized VCSEL transverse-mode structure

Author

Hegarty, S.P. ; Huyet, G. ; McInerney, J.G. ; Choquette, Kent D. ; Hou, H.Q. ; Geib, Kent M.

Author_Institution

Dept. of Phys., Univ. Coll. Cork, Ireland

fYear

1998

fDate

3-8 May 1998

Firstpage

447

Lastpage

448

Abstract

Summary form only given. We report the spectral and modal properties of small (0.5- to 5-/spl mu/m current aperture) VCSELs and identify Joule heating as a dominant effect in the resonator properties of the smallest lasers. The lasers studied here were AlGaAs structures with semiconductor distributed Bragg reflectors (DBRs), where the selectively oxidized confinement layer is pulled back three mirror periods from each side of the active region to produce a lateral effective index difference of 0.05.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser mirrors; refractive index; semiconductor lasers; surface emitting lasers; 0.5 mum; 1.5 mum; 5 mum; AlGaAs; AlGaAs structures; DBR lasers; Joule heating; VCSELs; active region; current aperture; lateral effective index difference; modal properties; resonator properties; selectively oxidized VCSEL transverse-mode structure; selectively oxidized confinement layer; semiconductor distributed Bragg reflectors; size dependence; spectral properties; three mirror periods; Bandwidth; Data communication; Distributed Bragg reflectors; Etching; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676480

Filename

676480