Monte Carlo simulations of carrier transport in high-speed quantum well lasers

Author

Crow, G.C. ; Abram, R.A.

Author_Institution

Dept. of Phys., Durham Univ., UK

fYear

1996

fDate

2-7 June 1996

Firstpage

49

Lastpage

50

Abstract

Summary form only given. This paper reports on simulations of InP based lasers with quantum wells designed to emit at 1.55 /spl mu/m, with varied well number and confinement layer geometry. Carrier transport within the device is modelled using the Monte Carlo method, and the carrier populations in the quantum wells interact with the photons in the laser cavity according to a relaxation time scheme. The particular advantage of the self-consistent Monte Carlo technique is that it can describe charge transport and relaxation on short spatial (nanometre) and temporal (femtosecond) intervals.

Keywords

III-V semiconductors; Monte Carlo methods; carrier relaxation time; high-speed optical techniques; indium compounds; quantum well lasers; 1.55 micron; InP; carrier transport; charge relaxation time; high-speed quantum well laser; self-consistent Monte Carlo simulation; Carrier confinement; Charge carrier processes; High speed optical techniques; Laser excitation; Laser theory; Optical pumping; Pump lasers; Quantum well lasers; Semiconductor lasers; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864343