Guided-mode size control over a large range by direct-write mechanisms in chalcogenide glasses: applications for optoelectronic interconnections

Summary form only given. Previously, we reported the use of rapid thermal annealing (RTA) on deposited films of Ge/sub 10/As/sub 40/Se/sub 25/S/sub 25/ glasses to yield photoinduced index changes as high as 5% on illumination with 488 nm light from an argon-ion laser. In this paper, we demonstrate the use of this effect to fabricate low-loss channel waveguides, whose guided-mode sizes may be changed over a large dynamic range to achieve many functions required of on-chip optical interconnection: sharp bends, high packing densities, and spot-size conversion.