Capacitance characterization of dielectric charging effect in RF MEMS capacitive switches under different humidity environments

Author

Wang, Li-Feng ; Tang, Jie-Ying ; Huang, Qing-An

Author_Institution

Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2012

fDate

Jan. 29 2012-Feb. 2 2012

Firstpage

680

Lastpage

683

Abstract

An analytical Capacitance-Voltage (CV) model is established according to the different situation of the up-state and down-state of the switch. By using the CV model, transient trapped charge response at different switch states and humidity levels are obtained. Different charging models according to different switch states are derived. Extracted model parameters of charging imply that injected charge quantity increases linearly with increasing humidity; the speed of charge injection at 50% and 80% RH is about 10 times faster than that at 20% RH.

Keywords

humidity; microswitches; RF MEMS capacitive switches; analytical CV model; analytical capacitance-voltage model; capacitance characterization; charge injection speed; dielectric charging effect; extracted charging model parameters; humidity environments; humidity levels; switch down-state; switch up-state; transient-trapped charge response; Bridge circuits; Capacitance; Dielectrics; Humidity; Metals; Micromechanical devices; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on

Conference_Location

Paris

ISSN

1084-6999

Print_ISBN

978-1-4673-0324-8

Type

conf

DOI

10.1109/MEMSYS.2012.6170278

Filename

6170278