• DocumentCode
    3547015
  • Title

    Low loss micromachined lead zirconate titanate, contour mode resonator with 50Ω termination

  • Author

    Bedair, S.S. ; Pulskamp, J.S. ; Polcawich, R.G. ; Judy, D. ; Gillon, A. ; Bhave, S. ; Morgan, B.

  • Author_Institution
    U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    708
  • Lastpage
    712
  • Abstract
    This paper reports lead zirconate titatanate (PZT)-on-silicon electromechanical resonators with excellent, 50 Ω terminated, performances for RF applications. A low 2.14 dB insertion loss is demonstrated for a length extensional, PZT-on-2-μm-silicon 15 MHz resonator. A 22 dB return loss and maximum unloaded quality factor, QUL, max, of ~540 in air resulted for this resonator. Similar performances with a QUL, max of 2850 are also demonstrated with a PZT fabricated on 10-μm-silicon device. The competing effects of decreased motional resistance and increased transducer capacitances with increased transduction area are addressed through analytical models and experimental results. Additionally, a third order length extensional mode piezoelectric resonator with asymmetric input and output electrodes were also designed to assess its potential performance as a piezoelectric resonant transformer; a 2.1× voltage boost is demonstrated for a 14.7 MHz extensional mode resonator.
  • Keywords
    Q-factor; crystal resonators; lead compounds; micromachining; micromechanical resonators; transformers; PZT-on-silicon electromechanical resonators; PbZrO3; contour mode resonator; extensional mode piezoelectric resonator; frequency 15 MHz; insertion loss; loss 2.14 dB; loss 22 dB; low loss micromachining; motional resistance; piezoelectric resonant transformer; quality factor; resistance 50 ohm; return loss; size 10 mum; transducer capacitances; Capacitance; Electrodes; Insertion loss; Q factor; Resonant frequency; Silicon; Silicon devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170285
  • Filename
    6170285