• DocumentCode
    3547204
  • Title

    A new CMOS charge pump for low voltage applications

  • Author

    Ahmadi, Mohammad Mahdi ; Jullien, Graham

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    4261
  • Abstract
    A new charge pump, which can operate with very low supply voltages, is proposed. The MOS transistors are used as charge transfer switches (pass gates) to eliminate the effect of the threshold voltage in the pumping gain of each stage. The MOS switch of each pumping stage is controlled by the output of a dynamic inverter established in the same stage; however, the control voltage of that inverter is derived from the preceding stage. This forward control scheme considerably reduces the risk of reverse current and eliminates the need for extra circuitry, which is necessary for establishing the initial node voltages. Simulation results show that the proposed charge pump has higher pumping gain compared to other published charge pumps.
  • Keywords
    CMOS integrated circuits; VLSI; low-power electronics; CMOS charge pump; MOS transistors; charge transfer switches; dynamic inverter; forward control scheme; low voltage applications; pass gates; pumping gain; threshold voltage; Charge pumps; Charge transfer; Circuits; Energy consumption; Inverters; Low voltage; MOSFETs; Switches; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465572
  • Filename
    1465572