DocumentCode
3547204
Title
A new CMOS charge pump for low voltage applications
Author
Ahmadi, Mohammad Mahdi ; Jullien, Graham
Author_Institution
Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
fYear
2005
fDate
23-26 May 2005
Firstpage
4261
Abstract
A new charge pump, which can operate with very low supply voltages, is proposed. The MOS transistors are used as charge transfer switches (pass gates) to eliminate the effect of the threshold voltage in the pumping gain of each stage. The MOS switch of each pumping stage is controlled by the output of a dynamic inverter established in the same stage; however, the control voltage of that inverter is derived from the preceding stage. This forward control scheme considerably reduces the risk of reverse current and eliminates the need for extra circuitry, which is necessary for establishing the initial node voltages. Simulation results show that the proposed charge pump has higher pumping gain compared to other published charge pumps.
Keywords
CMOS integrated circuits; VLSI; low-power electronics; CMOS charge pump; MOS transistors; charge transfer switches; dynamic inverter; forward control scheme; low voltage applications; pass gates; pumping gain; threshold voltage; Charge pumps; Charge transfer; Circuits; Energy consumption; Inverters; Low voltage; MOSFETs; Switches; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465572
Filename
1465572
Link To Document