Picosecond carrier lifetime in InGaAsP grown by He plasma-assisted molecular beam epitaxy

Author

Benjamin, Seldon D. ; Li Quan ; Ehrlich, J.E. ; Smith, P.W.E. ; Robinson, B.J. ; Thompson, Dennis A.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1996

fDate

2-7 June 1996

Firstpage

132

Abstract

Summary form only given. We present a new growth technique for InGaAsP to achieve short carrier lifetimes: He plasma-assisted molecular beam epitaxy. This technique yields a material with an ultrashort carrier lifetime, while maintaining the sharp band edge of material grown without a He plasma. We show that He-plasma-assisted-grown InGaAsP is a convenient means to obtain an ultrafast response and a strong nonlinearity at the important telecommunications wavelength of 1.55 /spl mu/m.

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; molecular beam epitaxial growth; plasma deposition; semiconductor epitaxial layers; semiconductor growth; 1.55 micron; He; InGaAsP; band edge; growth; nonlinearity; plasma-assisted molecular beam epitaxy; ultrafast optical response; ultrashort carrier lifetime; Charge carrier lifetime; Helium; Molecular beam epitaxial growth; Nonlinear optics; Optical devices; Optical pumping; Optical sensors; Plasma materials processing; Plasma temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864460