Measurement and interpretation of the high-frequency characteristics of InAlAs/InGaAs/InP MSM photodetectors

Author

Mitra, Abhijit ; Jau-Wen Chen ; Micovic, M. ; Mayer, Theresa S. ; Miller, Douglas L. ; Das, M.B.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

139

Abstract

Summary form only given. In this paper, by matching experimental frequency-response characteristics of InAlAs-InGaAs-InP metal-semiconductor-metal (MSM) photodetectors with theoretical results based on an effective one dimensional velocity saturated carrier transport model, we demonstrate the relative importance of hole and electron carrier transit times and the dependence of the 3 dB bandwidth on the applied bias voltage.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device models; semiconductor device testing; InAlAs-InGaAs-InP MSM photodetectors; InAlAs-InGaAs-InP metal-semiconductor-metal photodetectors; frequency-response characteristics; high-frequency characteristics; one dimensional velocity saturated carrier transport model; Bandwidth; Capacitance; Charge carrier processes; Frequency; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical buffering; Optoelectronic devices; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864469