DocumentCode
3547782
Title
Parallely testable design for detection of neighborhood pattern sensitive faults in high density DRAMs
Author
Kim, Ju Yeob ; Hong, Sung Je ; Kim, Jong
Author_Institution
Dept. of Electr. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
fYear
2005
fDate
23-26 May 2005
Firstpage
5854
Abstract
The number of test patterns for DRAM increases at least linearly as the memory density increases. It affects the increase in the total cost of memory test. We consider only neighborhood pattern sensitive faults, which are the major and complicated faults in a high density DRAM. Thus, for a 1 G DRAM, the testing time may be several hours if test patterns are applied to memory cells one by one. In order to speed up the testing of high density DRAMs, we propose a parallel accessible decoder, which allows multiple read/write operations at a time. With this scheme, we can reduce the testing time roughly 500 times. This new decoder requires only 8 extra transistors per bit line.
Keywords
DRAM chips; automatic testing; decoding; integrated circuit testing; semiconductor device testing; high density DRAM; integrated circuit devices; memory cells; multiple read/write operations; neighborhood pattern sensitive faults; parallel accessible decoder; semiconductor memory; test patterns; Circuit faults; Circuit testing; Costs; Decoding; Digital systems; Electrical fault detection; Fault detection; Random access memory; Semiconductor memory; Sequential analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465970
Filename
1465970
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