Advanced tunnel-injection laser based on the type II broken-gap GaInAsSb/lnAs heterojunction for the spectral range 3-3.5 /spl mu/m

Author

Yakovlev, Yu.P. ; Moiseev, K.D. ; Mikhailova, M.P. ; Ershov, O.G. ; Zegrya, Georgy G.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

2-7 June 1996

Firstpage

170

Lastpage

171

Abstract

Summary form only given. Recently we have proposed and demonstrated a novel tunnel-injection mid-IR laser based on type II broken-gap p-GaInAsSb/p-InAs heterostructure placed in the active layer. The main feature of this device was the lasing provided by tunnel injection of electrons and their radiative recombination with holes at the interface. Here we present a new advanced design of the tunnel-injection laser where high-operation temperature up to T=195 K was achieved in pulse regime.

Keywords

III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; infrared sources; laser transitions; semiconductor lasers; 195 K; 3 to 3.5 mum; GaInAsSb-InAs; active layer; high-operation temperature; pulse regime; radiative electron hole recombination; spectral range; tunnel injection; tunnel-injection laser; tunnel-injection mid-IR laser; type II broken-gap GaInAsSb/lnAs heterojunction; Charge carrier processes; Heterojunctions; Laser modes; Laser theory; Optical design; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864519