Continuously tuned far-infrared semiconductor laser and its use for investigations

Summary form only given. There are a great number of papers devoted to investigations of semiconductor far-infrared (80-200 /spl mu/m) lasers. These lasers are based on intersubband transitions of hot holes. Inversion of population is achieved due to different dynamics of light and heavy holes in crossed electric and magnetic fields. In this work we directly measured for the first time, to our knowledge, the active media gain value for Faraday configuration FC and for Voight configuration VC. The emission regions obtained for both configurations are shown. We observed the emission for the first time at temperatures near 77 K. The intensities of radiation for VC are differed about ten times at the lowest and at the highest temperatures.