Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure analysis applications

Author

Liao, Joy Y. ; Batteate, Patricia M.

Author_Institution

NVIDIA Corp., Santa Clara, CA, USA

fYear

2005

fDate

27 June-1 July 2005

Firstpage

123

Lastpage

126

Abstract

In this paper, we propose an accurate endpoint detection method to address etch accuracy and sample overheating, which are major challenges associated with dry etch of multilayer ICs in BGA packages for failure analysis applications. An RIE reactor equipped with an inductively-coupled plasma (ICP) unit was employed. Etch characterization was performed on advanced graphics ICs in BGA packages. We also report on experimentation with procedural development and hardware configuration to combat device overheating.

Keywords

ball grid arrays; failure analysis; integrated circuit packaging; plasma materials processing; plasma sources; sputter etching; ball grid array package; device overheating; dry etch; endpoint detection; failure analysis; hardware configuration; inductively-coupled plasma; multilayer integrated circuit; reactive ion etching; Application specific integrated circuits; Dry etching; Failure analysis; Graphics; Inductors; Integrated circuit packaging; Nonhomogeneous media; Plasma applications; Plasma devices; Plasma sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469144

Filename

1469144