• DocumentCode
    3549740
  • Title

    Methods for searching the cause of crack

  • Author

    Zhang, Bin ; Chen, Ning ; Zhang, Feizhou

  • Author_Institution
    Q & R, Intel Products (Shanghai) Ltd., Shanghai, China
  • fYear
    2005
  • fDate
    27 June-1 July 2005
  • Firstpage
    222
  • Lastpage
    225
  • Abstract
    Generally, nearly every step in the manufacture of integrated silicon devices will introduce the problem of residual stresses, which will cause crack in the active devices structure. In particular, crack often happens in the wafer saw, die attach, die bond and moulding process. Some crack figure can easily be fixed such as wafer saw induced from chip out at the edge of die. But many dies which fail die crack can´t be explained exactly. In this paper, we will gives some FA cases to explain many confusing crack which is induced in die attach was highly suspected.
  • Keywords
    cracks; elemental semiconductors; semiconductor device manufacture; silicon; Si; active devices structure; crack; die attach; die bond; integrated silicon devices manufacture; moulding process; residual stresses; wafer saw; Assembly; Bonding forces; Manufacturing processes; Microassembly; Semiconductor device manufacture; Silicon devices; Stress; Surface cracks; Transistors; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
  • Print_ISBN
    0-7803-9301-5
  • Type

    conf

  • DOI
    10.1109/IPFA.2005.1469166
  • Filename
    1469166