DocumentCode
3549781
Title
Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO2 gate dielectric
Author
Zhang, Z.B. ; Song, S.C. ; Huffman, C. ; Barnett, J. ; Moumen, N. ; Alshareef, H. ; Majhi, P. ; Hussain, M. ; Akbar, M.S. ; Sim, J.H. ; Bae, S.H. ; Sassman, B. ; Lee, B.H.
Author_Institution
SEMATECH, Austin, TX, USA
fYear
2005
fDate
14-16 June 2005
Firstpage
50
Lastpage
51
Abstract
We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO2 gate dielectric. The wet etch of TaSiN had a minimal impact on HfO2 (ΔEOT<1Å). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with Lg down to 85nm.
Keywords
CMOS integrated circuits; MIS structures; amorphous semiconductors; dielectric materials; electrodes; hafnium compounds; masks; nanotechnology; plasma deposited coatings; ruthenium; sputter etching; tantalum compounds; TaSiN-Ru-HfO2; device characteristics; dual metal gate CMOS transistors; gate dielectric; gate electrodes; gate stacks; plasma etch process; process module development; wet etch; CMOS process; Dielectric devices; Dry etching; Electrodes; Hafnium oxide; High-K gate dielectrics; MOS devices; Plasma applications; Tin; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN
4-900784-00-1
Type
conf
DOI
10.1109/.2005.1469208
Filename
1469208
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