Highly reliable 50nm contact cell technology for 256Mb PRAM

Author

Ahn, S.J. ; Hwang, Y.N. ; Song, Y.J. ; Lee, S.H. ; Lee, S.Y. ; Park, J.H. ; Jeong, C.W. ; Ryoo, K.C. ; Shin, J.M. ; Fai, Y. ; Oh, J.H. ; Koh, G.H. ; Jeong, G.T. ; Joo, S.H. ; Choi, S.H. ; Son, Y.H. ; Shin, J.C. ; Kim, Kinam ; Jeong, H.S. ; Kinam Kim

Author_Institution

Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Africa

fYear

2005

fDate

14-16 June 2005

Firstpage

98

Lastpage

99

Abstract

Novel small contact fabrication technologies were proposed to realize reliable high density 256Mb PRAM(phase change memory) product. Introducing the 2-step CMP (chemical mechanical polishing) process and the ring-shaped contact structure, the contact area distribution was greatly improved even at the smallest contact diameter of 50nm node. The validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0.10μm CMOS technology.

Keywords

CMOS integrated circuits; chemical mechanical polishing; random-access storage; 0.10 micron; 50 nm; CMOS technology; PRAM; chemical mechanical polishing; contact cell technology; phase change memory; CMOS technology; Chemical technology; Computer aided engineering; Contact resistance; Fabrication; Phase change random access memory; Probability distribution; Research and development; Semiconductor device reliability; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469227

Filename

1469227