The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs

Author

Lin, Hong-Nien ; Chen, Hung-Wei ; Ko, Chih-Hsin ; Ge, Chung-Hu ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Wen-Chin ; Tang, Denny D.

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2005

fDate

14-16 June 2005

Firstpage

174

Lastpage

175

Abstract

The influence of uniaxial process-induced strain on carrier channel backscattering in nanoscale MOSFETs is reported for the first time. It is observed that the backscattering ratio can be reduced by uniaxial tensile strain while it is increased by uniaxial compressive strain mainly due to strain-induced modulation in mean-free-path for backscattering and slight decrease in kBT layer thickness. Nevertheless, both strain polarities improve source-side injection velocity because of reduced carrier effective mass. Impact to current drive under uniaxial strain is analyzed in terms of mean-free-path, kBT layer thickness, ballistic efficiency and injection velocity.

Keywords

MOSFET; carrier mean free path; electron backscattering; nanoelectronics; carrier channel backscattering; mean-free-path; nanoscale MOSFET; reduced carrier effective mass; source-side injection velocity; strain-induced modulation; uniaxial compressive strain; uniaxial process-induced strain; uniaxial strain engineering; uniaxial tensile strain; Backscatter; CMOS process; CMOS technology; Capacitive sensors; Effective mass; MOS devices; MOSFETs; Semiconductor device manufacture; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469256

Filename

1469256