Molecular beam epitaxy regrowth of top reflectors for multiple wavelength vertical cavity laser arrays

Author

Wipiejewski, T. ; Ko, Jiweon ; Thibeault, Brian J. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

362

Lastpage

363

Abstract

Summary form only given. We have fabricated novel multiple wavelength vertical cavity surface-emitting InGaAs QW DBR (VCSEL) arrays employing molecular beam epitaxy (MBE) regrowth of the top distributed Bragg reflector (DBR). The individual emission wavelength of each laser element in the 2D array is set by anodic oxidation and selective etching of the wafer before regrowth.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; molecular beam epitaxial growth; optical fabrication; oxidation; quantum well lasers; reflectivity; semiconductor growth; semiconductor laser arrays; surface emitting lasers; 2D array; anodic oxidation; individual emission wavelength; laser element; molecular beam epitaxy regrowth; multiple wavelength InGaAs QW DBR VCSEL arrays; multiple wavelength vertical cavity laser arrays; selective etching; top distributed Bragg reflector; top reflectors; Amorphous materials; Distributed Bragg reflectors; Fingers; Gratings; Molecular beam epitaxial growth; Optical arrays; Optical polarization; Surface emitting lasers; Tellurium; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864791