Characteristics of asymmetric quantum well heterostructure lasers and amplifiers

Author

Afonenko, A.A. ; Kononenko, V.K. ; Manak, I.S.

Author_Institution

Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia

fYear

1996

fDate

2-7 June 1996

Firstpage

418

Abstract

Summary form only given. Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable configuration and doping of active and barrier layers. Light pulse duration reaches values about 50 to 100 ps. Transformation of gain bands for TE and TM modes is dependent on the excitation current has been studied and calculations have been performed for the five quantum well GaAs-AlGaAs system.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; infrared sources; laser modes; laser theory; laser transitions; quantum well lasers; semiconductor device models; 50 to 100 ps; 790 to 850 nm; GaAs-AlGaAs; GaAs-AlGaAs QW lasers; GaAs-AlGaAs systems; TE modes; TM modes; active layers; asymmetric quantum well heterostructure lasers; barrier layers; bi-quantum well heterostructure; doping; excitation current; five quantum well; gain bands; light pulse duration; rate equations; regular pulse generation; remote optical wavelengths; semiconductor laser amplifiers; triple quantum well heterostructure; Doping; Equations; Laser theory; Optical amplifiers; Optical pulse generation; Pulse amplifiers; Pulse generation; Quantum mechanics; Quantum well lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864864