DocumentCode
3551373
Title
A new CMOS on-chip high-voltage generator
Author
Favrat, Pierre ; Declercq, Michel J.
Author_Institution
Swiss Federal Institute of Technology, Lausanne, Switzerland
fYear
1998
fDate
22-24 Sept. 1998
Firstpage
104
Lastpage
107
Abstract
New MOS charge pumps using switches provide better performance than diodes implementations. A modified implementation of a Dickson voltage multiplier using dynamically biased pMOS as switches is presented. Accordingly with the measurements, a power efficiency theory is given. An implementation of a ten stages multiplier is presented generating an output voltage ten times higher from an input between 3 and 6V. The power efficiency of the ten times multiplier is inherently twice as previously reported Dickson implementations.
Keywords
Breakdown voltage; CMOS technology; Charge pumps; Diodes; Low voltage; MOS devices; MOSFETs; Power measurement; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Type
conf
DOI
10.1109/ESSCIR.1998.186219
Filename
1470976
Link To Document