DocumentCode
3551727
Title
A Si wide-band MMIC amplifier family for L-S band consumer product applications
Author
Takeuchi, H. ; Muraoka, M. ; Hatakeyama, T. ; Matsuoka, A. ; Honjou, M. ; Miyazaki, S. ; Tanaka, K. ; Nakata, T.
fYear
1991
fDate
10-14 July 1991
Firstpage
1283
Abstract
By using Si bipolar process technology, medium-power, low-noise and low-power-consumption amplifiers have been successfully realized. For the low-power-consumption amplifier, as little as 4 mA of total supply current is required with 3.4 V supply voltage, 2.3 GHz 3 dB bandwidth and 10.8 dB gain at 1 GHz.<>
Keywords
MMIC; bipolar integrated circuits; electronics industry; elemental semiconductors; microwave amplifiers; passivation; silicon; silicon compounds; wideband amplifiers; 10.8 dB; 2.3 GHz; 3.4 V; 4 mA; L-band; MMIC amplifier family; S-band; Si bipolar process technology; circuit diagram; consumer product applications; gain; low noise amplifiers; low-power-consumption amplifiers; medium power amplifiers; semiconductors; supply current; supply voltage; wideband amplifiers; Broadband amplifiers; Circuits; Consumer products; Energy consumption; Low-noise amplifiers; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-87942-591-1
Type
conf
DOI
10.1109/MWSYM.1991.147257
Filename
147257
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